Imec Launches 300mm GaN Program for Next-Generation Power De
Imec has launched a new research program focused on 300mm gallium nitride (GaN) technology to support the development of next-generation power devices. The initiative aims to improve performance, scalability, and cost efficiency for future power electronics.
Traditionally, GaN power devices are manufactured on smaller wafer sizes. By moving to a 300mm wafer platform, Imec seeks to leverage advanced semiconductor manufacturing tools, improve device uniformity, and enable higher-volume production.
The program brings together leading industry partners across equipment, materials, and design ecosystems, covering both low-voltage and high-voltage power applications. Target markets include data centers, electric vehicles, renewable energy systems, and advanced power conversion solutions.
With its high efficiency, fast switching speed, and lower power loss, GaN technology is expected to play a key role in next-generation power systems. Imec’s 300mm GaN program represents an important step toward accelerating the adoption of GaN power devices in commercial applications.
